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  Datasheet File OCR Text:
 .025" NPN Phototransistors
Clear T-13/4 (5 mm) Plastic Package
VTT1222W, 23W
PACKAGE DIMENSIONS inch (mm)
CASE 26W T-13/4 (5 mm) WIDE ANGLE CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (1/2) of 40. These devices are spectrally and mechanically matched to the VTE12xxW series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25C unless otherwise noted)
Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.)
-40C to 100C -40C to 100C 50 mW 0.71 mW/C 25 mA 260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92)
Light Current lC mA Min. VTT1222W VTT1223W 0.9 1.5 Max. -- -- H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 10 10 VCE (Volts) 20 20 Collector Breakdown VBR(CEO) lC = 100 A H= 0 Volts, Min. 50 40 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 6.0 6.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 2.0 3.0 Angular Response 1/2
Part Number
Typ. 40 40
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
93


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